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Relaxed SiGe buffer layer after several chemical preparations

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Relaxed SiGe buffer layer after several chemical preparations

The image was obtained M.V. Shaleev. Institute for Physics of Microstructures Russian Academy of Sciences, Nizhni Novgorod, the Russian Federation.
Sample courtesy of A.V. Novikov, I.Y Shuleshova, M.V. Shaleev Institute for Physics of Microstructures Russian Academy of Sciences.


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Relaxed SiGe buffer layer after several chemical preparations

Relaxed SiGe buffer layer after several chemical preparations

The image was obtained M.V. Shaleev. Institute for Physics of Microstructures Russian Academy of Sciences, Nizhni Novgorod, the Russian Federation.
Sample courtesy of A.V. Novikov, I.Y Shuleshova, M.V. Shaleev Institute for Physics of Microstructures Russian Academy of Sciences.



SPM principle: Amplitude modulation AFM
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