SiGe/Si(001) relaxed buffer layer (grown by CVD) subjected to etching. Investigations of forming SiGe 芦artificial substrates禄.
Image courtesy of Shaleev M, Institute for Physics of Microstructures RAS, Nizhny Novgorod, Russia.
Sample courtesy of Kuznetsov O., Novikov A., Shuleshova I., Shaleev M., Physical-Technical Research Institute, Institute for Physics of Microstructures RAS, Nizhny Novgorod, Russia.
