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Ge(Si) islands grown on relaxed SiGe buffer layer

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Ge(Si) islands grown on relaxed SiGe buffer layer

The image was obtained M.V. Shaleev. Institute for Physics of Microstructures Russian Academy of Sciences, Nizhni Novgorod, the Russian Federation.
Sample courtesy of A.V. Novikov, I.Y Shuleshova, M.V. Shaleev Institute for Physics of Microstructures Russian Academy of Sciences.


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Ge(Si) islands grown on relaxed SiGe buffer layer

Ge(Si) islands grown on relaxed SiGe buffer layer

The image was obtained M.V. Shaleev. Institute for Physics of Microstructures Russian Academy of Sciences, Nizhni Novgorod, the Russian Federation.
Sample courtesy of A.V. Novikov, I.Y Shuleshova, M.V. Shaleev Institute for Physics of Microstructures Russian Academy of Sciences.



SPM principle: Amplitude modulation AFM
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