Spiral stage on the surface of Si(111) formed as the result of a beat of the screw dislocation, and 2D negative islands (depth — 0.31 nm; lateral sizes — tens of nanometer) after thermal annealing of the silicon in oxygen atmosphere.
Image and sample courtesy of Rodyakina, Institute of Semiconductor Physics, Moscow, Russia.
Spiral stage on the surface of Si(111) formed as the result of a beat of the screw dislocation, and 2D negative islands (depth — 0.31 nm; lateral sizes — tens of nanometer) after thermal annealing of the silicon in oxygen atmosphere.
Image and sample courtesy of Rodyakina, Institute of Semiconductor Physics, Moscow, Russia.
