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Silicon nano-islands

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Self-organization of silicon nano-islands (0.3-0.6 nm in height) on stepped Si(111) surface – as the method of surface nanostructures formation. It has been revealed the ordering of two-dimensional silicon islands (one and two atomic layer in height) on special made interdomain boundaries of Si(111)-7x7 superstructure.

Image and sample courtesy of Rodyakina, Institute of Semiconductor Physics, Moscow, Russia.


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nanoostrovsi
Silicon nano-islands

Self-organization of silicon nano-islands (0.3-0.6 nm in height) on stepped Si(111) surface – as the method of surface nanostructures formation. It has been revealed the ordering of two-dimensional silicon islands (one and two atomic layer in height) on special made interdomain boundaries of Si(111)-7x7 superstructure.

Image and sample courtesy of Rodyakina, Institute of Semiconductor Physics, Moscow, Russia.


size: 3.2x3.2 um
SPM principle: Intermittent contact mode
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