+86 21 6079 0303
+86 135 2487 5604

Laser diode at work

AFM, KPM and Voltage Drop (dV/dx) images of GaAlAs/GaAs
n-i-p laser diode at different applied voltage.



A - AFM topography image. The emitter and waveguide regions are well-observed.

B,C - SKPM and Voltage Drop images at -1.5V (reverse) bias voltage applied.

D,E - SKPM and Voltage Drop images without bias voltage.

F,G - SKPM and Voltage Drop images at +1.5V (forward) bias voltage applied.



Sample of laser diode cleave and images courtesy of Alexander Ankudinov
(group of A.Titkov),
Ioffe Physico-Technical Institute, St. Petersburg, Russia

laser_diode_at_work_scanning_kelvin_potential_microscopy_6.0x1
laser_diode_at_work_scanning_kelvin_potential_microscopy_6.0x1
Laser diode at work
AFM, KPM and Voltage Drop (dV/dx) images of GaAlAs/GaAs
n-i-p laser diode at different applied voltage.



A - AFM topography image. The emitter and waveguide regions are well-observed.

B,C - SKPM and Voltage Drop images at -1.5V (reverse) bias voltage applied.

D,E - SKPM and Voltage Drop images without bias voltage.

F,G - SKPM and Voltage Drop images at +1.5V (forward) bias voltage applied.



Sample of laser diode cleave and images courtesy of Alexander Ankudinov
(group of A.Titkov),
Ioffe Physico-Technical Institute, St. Petersburg, Russia
size: 6.0x1.2 um
SPM principle: Kelvin Probe Force Microscopy
Have more questions? Contact us +7-499-110-2050
or fulfill a form and we will answer all your questions.